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Why are field-effect transistor switches inferior to bipolar transistor switches in terms of speed?
Reading the literature, I came across such a statement that the keys on field-effect transistors lose in terms of speed to keys on bipolar transistors. I tried to find some arguments on the Internet, but without success, maybe someone can clearly explain why they lose?
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This is nonsense, where it came from - it is not clear.
The speed of the key in a real circuit is determined by 2 factors - the time for transients to occur inside the transistor (for example, the time it takes for the base space charge to dissipate) and the time it takes for the driver to pull the key (the gate / drain capacity can be very significant. But the bipolar base / the collector is also not without it).
It makes no sense to argue further - it makes sense to look at what solutions are used for different tasks (different currents, different voltages, different unlocking / locking times).
For example, the keys of pulsed power supplies are entirely field workers.
Continuing this list, you can easily figure out where what is used. Here is the answer.
Most likely you read the old literature (before 1995), then the technologies were not developed and field-effect transistors were considered worse than bipolar ones in many respects, including speed.
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